KSA1242OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSA1242OTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSIP-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
10W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 4A
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
5A
Transition Frequency
180MHz
Frequency - Transition
180MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.18000
$0.18
500
$0.1782
$89.1
1000
$0.1764
$176.4
1500
$0.1746
$261.9
2000
$0.1728
$345.6
2500
$0.171
$427.5
KSA1242OTU Product Details
KSA1242OTU Overview
In this device, the DC current gain is 100 @ 500mA 2V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 100mA, 4A.A transition frequency of 180MHz is present in the part.There is a 20V maximal voltage in the device due to collector-emitter breakdown.
KSA1242OTU Features
the DC current gain for this device is 100 @ 500mA 2V the vce saturation(Max) is 1V @ 100mA, 4A a transition frequency of 180MHz
KSA1242OTU Applications
There are a lot of Rochester Electronics, LLC KSA1242OTU applications of single BJT transistors.