KSD471AGBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSD471AGBU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
800mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
1A
Transition Frequency
130MHz
Frequency - Transition
130MHz
RoHS Status
ROHS3 Compliant
KSD471AGBU Product Details
KSD471AGBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 1V.A VCE saturation (Max) of 500mV @ 100mA, 1A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 130MHz.The device has a 30V maximal voltage - Collector Emitter Breakdown.
KSD471AGBU Features
the DC current gain for this device is 200 @ 100mA 1V the vce saturation(Max) is 500mV @ 100mA, 1A a transition frequency of 130MHz
KSD471AGBU Applications
There are a lot of Rochester Electronics, LLC KSD471AGBU applications of single BJT transistors.