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KSE3055T

  • KSE3055T
  • KSE3055T

KSE3055T

KSE3055T

Rochester Electronics, LLC

KSE3055T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

KSE3055T Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 600mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 700μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 10A
Transition Frequency 2MHz
Frequency - Transition 2MHz
RoHS Status ROHS3 Compliant
KSE3055T Product Details

KSE3055T Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 4A 4V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 8V @ 3.3A, 10A.A transition frequency of 2MHz is present in the part.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

KSE3055T Features


the DC current gain for this device is 20 @ 4A 4V
the vce saturation(Max) is 8V @ 3.3A, 10A
a transition frequency of 2MHz

KSE3055T Applications


There are a lot of Rochester Electronics, LLC KSE3055T applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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