MJD350 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJD350 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tube
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
15W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 10V
Current - Collector Cutoff (Max)
100μA
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
500mA
RoHS Status
Non-RoHS Compliant
MJD350 Product Details
MJD350 Overview
In this device, the DC current gain is 30 @ 50mA 10V, which is the ratio between the base current and the collector current.The device exhibits a collector-emitter breakdown at 300V.
MJD350 Features
the DC current gain for this device is 30 @ 50mA 10V
MJD350 Applications
There are a lot of Rochester Electronics, LLC MJD350 applications of single BJT transistors.