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MJD350

MJD350

MJD350

Rochester Electronics, LLC

MJD350 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MJD350 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Transistor Element Material SILICON
PackagingTube
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish TIN LEAD
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 240
[email protected] Reflow Temperature-Max (s) 30
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusCOMMERCIAL
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 15W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Current - Collector Cutoff (Max) 100μA
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 500mA
RoHS StatusNon-RoHS Compliant
In-Stock:4571 items

MJD350 Product Details

MJD350 Overview


In this device, the DC current gain is 30 @ 50mA 10V, which is the ratio between the base current and the collector current.The device exhibits a collector-emitter breakdown at 300V.

MJD350 Features


the DC current gain for this device is 30 @ 50mA 10V

MJD350 Applications


There are a lot of Rochester Electronics, LLC MJD350 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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