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2SD2212T100

2SD2212T100

2SD2212T100

ROHM Semiconductor

2SD2212T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD2212T100 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Contact PlatingCopper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2004
JESD-609 Code e2
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation2W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Current Rating2A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD2212
Pin Count3
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation500mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 70V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A
Collector Emitter Breakdown Voltage60V
Max Breakdown Voltage 60V
Frequency - Transition 80MHz
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 6V
hFE Min 1000
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2882 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.244845$0.244845
10$0.230985$2.30985
100$0.217911$21.7911
500$0.205577$102.7885
1000$0.193940$193.94

2SD2212T100 Product Details

2SD2212T100 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 1A 2V DC current gain.When VCE saturation is 1.5V @ 1mA, 1A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2A current rating.As a result, it can handle voltages as low as 60V volts.In extreme cases, the collector current can be as low as 2A volts.

2SD2212T100 Features


the DC current gain for this device is 1000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A

2SD2212T100 Applications


There are a lot of ROHM Semiconductor 2SD2212T100 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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