2N6515RLRMG Overview
This device has a DC current gain of 45 @ 50mA 10V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1V allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 5mA, 50mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.40MHz is present in the transition frequency.During maximum operation, collector current can be as low as 500mA volts.
2N6515RLRMG Features
the DC current gain for this device is 45 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
2N6515RLRMG Applications
There are a lot of ON Semiconductor 2N6515RLRMG applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
