MJE702 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJE702 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Transistor Element Material
SILICON
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
3
Terminal Finish
TIN LEAD
Additional Feature
BUILT IN BIAS RESISTOR
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Power - Max
40W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A 3V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
4A
Transition Frequency
1MHz
RoHS Status
Non-RoHS Compliant
MJE702 Product Details
MJE702 Overview
DC current gain in this device equals 750 @ 1.5A 3V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 2.5V @ 30mA, 1.5A means Ic has reached its maximum value(saturated).In the part, the transition frequency is 1MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.
MJE702 Features
the DC current gain for this device is 750 @ 1.5A 3V the vce saturation(Max) is 2.5V @ 30mA, 1.5A a transition frequency of 1MHz
MJE702 Applications
There are a lot of Rochester Electronics, LLC MJE702 applications of single BJT transistors.