MMBT2907ALT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MMBT2907ALT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN
HTS Code
8541.21.00.75
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
225mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
JEDEC-95 Code
TO-236AB
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
200MHz
Frequency - Transition
200MHz
Turn Off Time-Max (toff)
100ns
Turn On Time-Max (ton)
45ns
RoHS Status
ROHS3 Compliant
MMBT2907ALT1 Product Details
MMBT2907ALT1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 200MHz.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
MMBT2907ALT1 Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 1.6V @ 50mA, 500mA a transition frequency of 200MHz
MMBT2907ALT1 Applications
There are a lot of Rochester Electronics, LLC MMBT2907ALT1 applications of single BJT transistors.