MPS6724G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MPS6724G Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Power - Max
1W
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
4000 @ 1A 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 2mA, 1A
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
1A
Transition Frequency
100MHz
Frequency - Transition
1GHz
RoHS Status
ROHS3 Compliant
MPS6724G Product Details
MPS6724G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 4000 @ 1A 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 2mA, 1A.In this part, there is a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.
MPS6724G Features
the DC current gain for this device is 4000 @ 1A 5V the vce saturation(Max) is 1.5V @ 2mA, 1A a transition frequency of 100MHz
MPS6724G Applications
There are a lot of Rochester Electronics, LLC MPS6724G applications of single BJT transistors.