NJD2873 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
NJD2873 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tube
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
15W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
2A
Transition Frequency
65MHz
Frequency - Transition
65MHz
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.27000
$0.27
500
$0.2673
$133.65
1000
$0.2646
$264.6
1500
$0.2619
$392.85
2000
$0.2592
$518.4
2500
$0.2565
$641.25
NJD2873 Product Details
NJD2873 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 500mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 50mA, 1A.As a result, the part has a transition frequency of 65MHz.This device displays a 50V maximum voltage - Collector Emitter Breakdown.
NJD2873 Features
the DC current gain for this device is 120 @ 500mA 2V the vce saturation(Max) is 300mV @ 50mA, 1A a transition frequency of 65MHz
NJD2873 Applications
There are a lot of Rochester Electronics, LLC NJD2873 applications of single BJT transistors.