MJW3281AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJW3281AG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
230V
Max Power Dissipation
200W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
260
Current Rating
15A
Frequency
30MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power Dissipation
200W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
30MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
230V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 7A 5V
Current - Collector Cutoff (Max)
50μA ICBO
JEDEC-95 Code
TO-247AD
Vce Saturation (Max) @ Ib, Ic
2V @ 1A, 10A
Collector Emitter Breakdown Voltage
230V
Transition Frequency
30MHz
Collector Emitter Saturation Voltage
400mV
Collector Base Voltage (VCBO)
230V
Emitter Base Voltage (VEBO)
5V
hFE Min
50
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.52000
$3.52
30
$3.00433
$90.1299
120
$2.61783
$314.1396
510
$2.24420
$1144.542
1,020
$1.90923
$1.90923
MJW3281AG Product Details
MJW3281AG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 7A 5V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 1A, 10A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 15A.In the part, the transition frequency is 30MHz.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
MJW3281AG Features
the DC current gain for this device is 50 @ 7A 5V a collector emitter saturation voltage of 400mV the vce saturation(Max) is 2V @ 1A, 10A the emitter base voltage is kept at 5V the current rating of this device is 15A a transition frequency of 30MHz
MJW3281AG Applications
There are a lot of ON Semiconductor MJW3281AG applications of single BJT transistors.