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MJW3281AG

MJW3281AG

MJW3281AG

ON Semiconductor

MJW3281AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJW3281AG Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 230V
Max Power Dissipation 200W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Current Rating 15A
Frequency 30MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Configuration SINGLE
Power Dissipation 200W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 230V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 7A 5V
Current - Collector Cutoff (Max) 50μA ICBO
JEDEC-95 Code TO-247AD
Vce Saturation (Max) @ Ib, Ic 2V @ 1A, 10A
Collector Emitter Breakdown Voltage 230V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage 400mV
Collector Base Voltage (VCBO) 230V
Emitter Base Voltage (VEBO) 5V
hFE Min 50
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.52000 $3.52
30 $3.00433 $90.1299
120 $2.61783 $314.1396
510 $2.24420 $1144.542
1,020 $1.90923 $1.90923
MJW3281AG Product Details

MJW3281AG Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 7A 5V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 1A, 10A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 15A.In the part, the transition frequency is 30MHz.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.

MJW3281AG Features


the DC current gain for this device is 50 @ 7A 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 2V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 30MHz

MJW3281AG Applications


There are a lot of ON Semiconductor MJW3281AG applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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