FZT749TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT749TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-25V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-3A
Frequency
160MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
FZT749
Number of Elements
1
Voltage
25V
Element Configuration
Single
Current
3A
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
160MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
25V
Transition Frequency
160MHz
Collector Emitter Saturation Voltage
-400mV
Max Breakdown Voltage
25V
Collector Base Voltage (VCBO)
35V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
-3A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.685440
$0.68544
10
$0.646642
$6.46642
100
$0.610039
$61.0039
500
$0.575509
$287.7545
1000
$0.542933
$542.933
FZT749TA Product Details
FZT749TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -400mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 300mA, 3A.Maintaining the continuous collector voltage at -3A is essential for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -3A.In this part, there is a transition frequency of 160MHz.A breakdown input voltage of 25V volts can be used.Maximum collector currents can be below 3A volts.
FZT749TA Features
the DC current gain for this device is 100 @ 1A 2V a collector emitter saturation voltage of -400mV the vce saturation(Max) is 600mV @ 300mA, 3A the emitter base voltage is kept at 5V the current rating of this device is -3A a transition frequency of 160MHz
FZT749TA Applications
There are a lot of Diodes Incorporated FZT749TA applications of single BJT transistors.