2SD1207T-AE Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 2V.A collector emitter saturation voltage of 150mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 6V for high efficiency.There is a transition frequency of 150MHz in the part.This device can take an input voltage of 50V volts before it breaks down.During maximum operation, collector current can be as low as 2A volts.

2SD1207T-AE Features

the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

2SD1207T-AE Applications

There are a lot of ON Semiconductor 2SD1207T-AE applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver