NTLTD7900ZR2G

new-10%

Manufacturer part number:NTLTD7900ZR2G

Manufacturer:Rochester Electronics, LLC

Description:N-CHANNEL POWER MOSFET

Case Package:SOT-23

Datasheet:NTLTD7900ZR2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-VDFN Exposed Pad
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Terminal Finish	MATTE TIN
Additional Feature	ESD PROTECTED
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	R-XDSO-N8
Qualification Status	COMMERCIAL
Number of Elements	2
Configuration	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Power - Max	1.5W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	26m Ω @ 6.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	15pF @ 16V
Current - Continuous Drain (Id) @ 25°C	6A
Gate Charge (Qg) (Max) @ Vgs	18nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.026Ohm
Pulsed Drain Current-Max (IDM)	30A
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant