TIP30ATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
TIP30ATU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
2W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 1A 4V
Current - Collector Cutoff (Max)
200μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
700mV @ 125mA, 1A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
1A
Transition Frequency
3MHz
Frequency - Transition
3MHz
RoHS Status
ROHS3 Compliant
TIP30ATU Product Details
TIP30ATU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 1A 4V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 125mA, 1A.In this part, there is a transition frequency of 3MHz.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
TIP30ATU Features
the DC current gain for this device is 15 @ 1A 4V the vce saturation(Max) is 700mV @ 125mA, 1A a transition frequency of 3MHz
TIP30ATU Applications
There are a lot of Rochester Electronics, LLC TIP30ATU applications of single BJT transistors.