2SD1758TLR Overview

This device has a DC current gain of 180 @ 500mA 3V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 200mA, 2A.Continuous collector voltages should be kept at 2A to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.There is a transition frequency of 100MHz in the part.The breakdown input voltage is 32V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

2SD1758TLR Features

the DC current gain for this device is 180 @ 500mA 3V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz

2SD1758TLR Applications

There are a lot of ROHM Semiconductor 2SD1758TLR applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter