2SAR502U3T106 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Device displays Collector Emitter Breakdown (30V maximal voltage).
2SAR502U3T106 Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 10mA, 200mA
2SAR502U3T106 Applications
There are a lot of ROHM Semiconductor 2SAR502U3T106 applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
