2SAR587D3TL1 Overview
In this device, the DC current gain is 120 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).There is a 120V maximal voltage in the device due to collector-emitter breakdown.
2SAR587D3TL1 Features
the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 200mV @ 100mA, 1A
2SAR587D3TL1 Applications
There are a lot of ROHM Semiconductor 2SAR587D3TL1 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
