BD810G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 4A 2V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.1V @ 300mA, 3A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.In the part, the transition frequency is 1.5MHz.Collector current can be as low as 10A volts at its maximum.
BD810G Features
the DC current gain for this device is 15 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 1.5MHz
BD810G Applications
There are a lot of ON Semiconductor BD810G applications of single BJT transistors.
- Driver
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- Interface
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- Muting
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- Inverter
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