2SB1182TLQ Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 500mA 3V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is essential to maintain the continuous collector voltage at -2A to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -2A.The part has a transition frequency of 100MHz.There is a breakdown input voltage of 32V volts that it can take.Collector current can be as low as 2A volts at its maximum.

2SB1182TLQ Features

the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 100MHz

2SB1182TLQ Applications

There are a lot of ROHM Semiconductor 2SB1182TLQ applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver