2SB1188T100P Overview
In this device, the DC current gain is 82 @ 500mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 5V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -2A current rating.100MHz is present in the transition frequency.In extreme cases, the collector current can be as low as 2A volts.
2SB1188T100P Features
the DC current gain for this device is 82 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
2SB1188T100P Applications
There are a lot of ROHM Semiconductor 2SB1188T100P applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
