2SB1197KT146Q Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 3V DC current gain.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is recommended to keep the continuous collector voltage at -800mA in order to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.Input voltage breakdown is available at 32V volts.A maximum collector current of 800mA volts can be achieved.
2SB1197KT146Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz
2SB1197KT146Q Applications
There are a lot of ROHM Semiconductor 2SB1197KT146Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
