JAN2N2222A Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 6V, an efficient operation can be achieved.Supplier device package TO-218 comes with the product.Detection of Collector Emitter Breakdown at 50V maximal voltage is present.During maximum operation, collector current can be as low as 800mA volts.
JAN2N2222A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-218
JAN2N2222A Applications
There are a lot of Microsemi Corporation JAN2N2222A applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
