2N3501UB Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.When VCE saturation is 400mV @ 15mA, 150mA, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 6V for high efficiency.

2N3501UB Features

the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V

2N3501UB Applications

There are a lot of Microsemi Corporation 2N3501UB applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver