ZXTN5551GTA Overview

This device has a DC current gain of 80 @ 10mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 6V can achieve high levels of efficiency.As a result, the part has a transition frequency of 130MHz.Single BJT transistor can be broken down at a voltage of 160V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.

ZXTN5551GTA Features

the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 130MHz

ZXTN5551GTA Applications

There are a lot of Diodes Incorporated ZXTN5551GTA applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface