MMJT9435T3G Overview

DC current gain in this device equals 125 @ 800mA 1V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 155mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.As you can see, the part has a transition frequency of 110MHz.During maximum operation, collector current can be as low as 3A volts.

MMJT9435T3G Features

the DC current gain for this device is 125 @ 800mA 1V
a collector emitter saturation voltage of 155mV
the vce saturation(Max) is 550mV @ 300mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is -3A
a transition frequency of 110MHz

MMJT9435T3G Applications

There are a lot of ON Semiconductor MMJT9435T3G applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface