BC847BM3T5G Overview

DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.The part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.The maximum collector current is 100mA volts.

BC847BM3T5G Features

the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

BC847BM3T5G Applications

There are a lot of ON Semiconductor BC847BM3T5G applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter