MMBTA14LT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20000 @ 100mA 5V.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 100μA, 100mA.Continuous collector voltages of 300mA should be maintained to achieve high efficiency.Keeping the emitter base voltage at 10V can result in a high level of efficiency.This device has a current rating of 300mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 125MHz.As a result, it can handle voltages as low as 30V volts.During maximum operation, collector current can be as low as 300mA volts.
MMBTA14LT1G Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz
MMBTA14LT1G Applications
There are a lot of ON Semiconductor MMBTA14LT1G applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
