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2SB1326TV2Q

2SB1326TV2Q

2SB1326TV2Q

ROHM Semiconductor

2SB1326TV2Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SB1326TV2Q Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case 3-SIP
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2004
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation 1W
Peak Reflow Temperature (Cel) 260
Current Rating -5A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SB1326
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 120MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 700mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 4A
Collector Emitter Breakdown Voltage 80V
Voltage - Collector Emitter Breakdown (Max) 20V
Current - Collector (Ic) (Max) 5A
Transition Frequency 120MHz
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
hFE Min 120
RoHS Status ROHS3 Compliant
Lead Free Lead Free
2SB1326TV2Q Product Details

2SB1326TV2Q Overview


This device has a DC current gain of 120 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 6V allows for a high level of efficiency.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.120MHz is present in the transition frequency.Input voltage breakdown is available at 20V volts.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.A maximum collector current of 700mA volts is possible.

2SB1326TV2Q Features


the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is -5A
a transition frequency of 120MHz

2SB1326TV2Q Applications


There are a lot of ROHM Semiconductor 2SB1326TV2Q applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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