2SB1326TV2Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SB1326TV2Q Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
3-SIP
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2004
JESD-609 Code
e1
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Max Power Dissipation
1W
Peak Reflow Temperature (Cel)
260
Current Rating
-5A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SB1326
Pin Count
3
JESD-30 Code
R-PSIP-T3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
120MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
700mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA 2V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 4A
Collector Emitter Breakdown Voltage
80V
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
5A
Transition Frequency
120MHz
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
6V
hFE Min
120
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
2SB1326TV2Q Product Details
2SB1326TV2Q Overview
This device has a DC current gain of 120 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 6V allows for a high level of efficiency.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.120MHz is present in the transition frequency.Input voltage breakdown is available at 20V volts.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.A maximum collector current of 700mA volts is possible.
2SB1326TV2Q Features
the DC current gain for this device is 120 @ 500mA 2V the vce saturation(Max) is 1V @ 100mA, 4A the emitter base voltage is kept at 6V the current rating of this device is -5A a transition frequency of 120MHz
2SB1326TV2Q Applications
There are a lot of ROHM Semiconductor 2SB1326TV2Q applications of single BJT transistors.