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2SC536NG-NPA-AT

2SC536NG-NPA-AT

2SC536NG-NPA-AT

Rochester Electronics, LLC

2SC536NG-NPA-AT datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2SC536NG-NPA-AT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-226AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 500mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 280 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 150mA
Frequency - Transition 200MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.04000 $0.04
500 $0.0396 $19.8
1000 $0.0392 $39.2
1500 $0.0388 $58.2
2000 $0.0384 $76.8
2500 $0.038 $95
2SC536NG-NPA-AT Product Details

2SC536NG-NPA-AT Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 280 @ 1mA 6V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.TO-226AA is the supplier device package for this product.This device displays a 50V maximum voltage - Collector Emitter Breakdown.

2SC536NG-NPA-AT Features


the DC current gain for this device is 280 @ 1mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the supplier device package of TO-226AA

2SC536NG-NPA-AT Applications


There are a lot of Rochester Electronics, LLC 2SC536NG-NPA-AT applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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