MJ21193G

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Manufacturer part number:MJ21193G

Manufacturer:ON Semiconductor

Description:MJ21193G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MJ21193G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	5 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mounting Type	Through Hole
Package / Case	TO-204AA, TO-3
Surface Mount	NO
Number of Pins	2
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-65°C~200°C TJ
Packaging	Tray
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-250V
Max Power Dissipation	250W
Terminal Position	BOTTOM
Terminal Form	PIN/PEG
Current Rating	-16A
Frequency	4MHz
Pin Count	2
Number of Elements	1
Element Configuration	Single
Power Dissipation	250W
Case Connection	COLLECTOR
Transistor Application	AMPLIFIER
Gain Bandwidth Product	4MHz
Polarity/Channel Type	PNP
Transistor Type	PNP
Collector Emitter Voltage (VCEO)	250V
Max Collector Current	16A
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 8A 5V
Current - Collector Cutoff (Max)	100μA
Vce Saturation (Max) @ Ib, Ic	4V @ 3.2A, 16A
Collector Emitter Breakdown Voltage	250V
Transition Frequency	4MHz
Collector Emitter Saturation Voltage	1.4V
Collector Base Voltage (VCBO)	400V
Emitter Base Voltage (VEBO)	5V
hFE Min	25
Height	8.51mm
Length	39.37mm
Width	26.67mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free