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STB13007DT4

  • STB13007DT4
  • STB13007DT4

STB13007DT4

STB13007DT4

STMicroelectronics

STB13007DT4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

STB13007DT4 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier TO-263-P011P6
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 400V
Max Power Dissipation 80W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Current Rating 8A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STB13007
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 80W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 3V @ 1A, 5A
Collector Emitter Breakdown Voltage 400V
Collector Emitter Saturation Voltage 3V
Max Breakdown Voltage 400V
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 9V
hFE Min 8
Max Junction Temperature (Tj) 150°C
Height 4.83mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.55068 $0.55068
2,000 $0.51792 $1.03584
5,000 $0.49608 $2.4804
STB13007DT4 Product Details

STB13007DT4 Overview


This device has a DC current gain of 8 @ 5A 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 3V allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 1A, 5A.The base voltage of the emitter can be kept at 9V to achieve high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.Input voltage breakdown is available at 400V volts.The maximum collector current is 8A volts.

STB13007DT4 Features


the DC current gain for this device is 8 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 5A
the emitter base voltage is kept at 9V
the current rating of this device is 8A

STB13007DT4 Applications


There are a lot of STMicroelectronics STB13007DT4 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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