KSC2331YSHTA Overview
In this device, the DC current gain is 120 @ 50mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 700mA.The maximum collector current is 700mA volts.
KSC2331YSHTA Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
KSC2331YSHTA Applications
There are a lot of ON Semiconductor KSC2331YSHTA applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
