BD179 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BD179 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
30W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 2V 1A
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
3A
Transition Frequency
3MHz
RoHS Status
Non-RoHS Compliant
BD179 Product Details
BD179 Overview
In this device, the DC current gain is 15 @ 2V 1A, which is the ratio between the base current and the collector current.When VCE saturation is 800mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).3MHz is present in the transition frequency.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BD179 Features
the DC current gain for this device is 15 @ 2V 1A the vce saturation(Max) is 800mV @ 100mA, 1A a transition frequency of 3MHz
BD179 Applications
There are a lot of Rochester Electronics, LLC BD179 applications of single BJT transistors.