2SC4617EBTLQ Overview
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Maintaining the continuous collector voltage at 150mA is essential for high efficiency.An emitter's base voltage can be kept at 7V to gain high efficiency.The part has a transition frequency of 180MHz.Input voltage breakdown is available at 50V volts.During maximum operation, collector current can be as low as 150mA volts.
2SC4617EBTLQ Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 180MHz
2SC4617EBTLQ Applications
There are a lot of ROHM Semiconductor 2SC4617EBTLQ applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
