ZTX758STOA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX758STOA Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
HTS Code
8541.29.00.75
Voltage - Rated DC
-400V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX758
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 200mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
400V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
-500mV
Collector Base Voltage (VCBO)
-400V
Emitter Base Voltage (VEBO)
-5V
Continuous Collector Current
-500mA
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
ZTX758STOA Product Details
ZTX758STOA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 200mA 10V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 10mA, 100mA.A constant collector voltage of -500mA is necessary for high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.When collector current reaches its maximum, it can reach 500mA volts.
ZTX758STOA Features
the DC current gain for this device is 40 @ 200mA 10V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 10mA, 100mA the emitter base voltage is kept at -5V the current rating of this device is -500mA a transition frequency of 50MHz
ZTX758STOA Applications
There are a lot of Diodes Incorporated ZTX758STOA applications of single BJT transistors.