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ZTX758STOA

ZTX758STOA

ZTX758STOA

Diodes Incorporated

ZTX758STOA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX758STOA Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature-55°C~200°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.29.00.75
Voltage - Rated DC -400V
Max Power Dissipation1W
Terminal FormWIRE
Peak Reflow Temperature (Cel) 260
Current Rating-500mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZTX758
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Transistor Application SWITCHING
Gain Bandwidth Product50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage400V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 50MHz
Collector Emitter Saturation Voltage-500mV
Collector Base Voltage (VCBO) -400V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -500mA
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2120 items

ZTX758STOA Product Details

ZTX758STOA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 200mA 10V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 10mA, 100mA.A constant collector voltage of -500mA is necessary for high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.When collector current reaches its maximum, it can reach 500mA volts.

ZTX758STOA Features


the DC current gain for this device is 40 @ 200mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 50MHz

ZTX758STOA Applications


There are a lot of Diodes Incorporated ZTX758STOA applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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