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2SCR554PT100

2SCR554PT100

2SCR554PT100

ROHM Semiconductor

2SCR554PT100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SCR554PT100 Datasheet

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Specifications
Name Value
Type Parameter
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN COPPER
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SCR554
Pin Count 3
Number of Elements 1
Configuration SINGLE
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage 80V
Max Frequency 300MHz
Transition Frequency 300MHz
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
hFE Min 120
Continuous Collector Current 1.5A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.053440 $0.05344
500 $0.039294 $19.647
1000 $0.032745 $32.745
2000 $0.030041 $60.082
5000 $0.028076 $140.38
10000 $0.026117 $261.17
15000 $0.025258 $378.87
50000 $0.024836 $1241.8
2SCR554PT100 Product Details

2SCR554PT100 Overview


DC current gain in this device equals 120 @ 100mA 3V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 300mV @ 25mA, 500mA means Ic has reached its maximum value(saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 1.5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.There is a transition frequency of 300MHz in the part.Input voltage breakdown is available at 80V volts.During maximum operation, collector current can be as low as 1.5A volts.

2SCR554PT100 Features


the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 300mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

2SCR554PT100 Applications


There are a lot of ROHM Semiconductor 2SCR554PT100 applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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