2SCR554PT100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SCR554PT100 Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN COPPER
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SCR554
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage
80V
Max Frequency
300MHz
Transition Frequency
300MHz
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
6V
hFE Min
120
Continuous Collector Current
1.5A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.053440
$0.05344
500
$0.039294
$19.647
1000
$0.032745
$32.745
2000
$0.030041
$60.082
5000
$0.028076
$140.38
10000
$0.026117
$261.17
15000
$0.025258
$378.87
50000
$0.024836
$1241.8
2SCR554PT100 Product Details
2SCR554PT100 Overview
DC current gain in this device equals 120 @ 100mA 3V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 300mV @ 25mA, 500mA means Ic has reached its maximum value(saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 1.5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.There is a transition frequency of 300MHz in the part.Input voltage breakdown is available at 80V volts.During maximum operation, collector current can be as low as 1.5A volts.
2SCR554PT100 Features
the DC current gain for this device is 120 @ 100mA 3V the vce saturation(Max) is 300mV @ 25mA, 500mA the emitter base voltage is kept at 6V a transition frequency of 300MHz
2SCR554PT100 Applications
There are a lot of ROHM Semiconductor 2SCR554PT100 applications of single BJT transistors.