2SD1949T106Q Overview

This device has a DC current gain of 120 @ 10mA 3V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.A constant collector voltage of 500mA is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).The part has a transition frequency of 250MHz.An input voltage of 50V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

2SD1949T106Q Features

the DC current gain for this device is 120 @ 10mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 250MHz

2SD1949T106Q Applications

There are a lot of ROHM Semiconductor 2SD1949T106Q applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver