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BC32716BU

BC32716BU

BC32716BU

ON Semiconductor

BC32716BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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BC32716BU Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 179mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -45V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -800mA
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC327
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -700mV
Collector Base Voltage (VCBO) -10V
Emitter Base Voltage (VEBO) -5V
hFE Min 100
Height 4.58mm
Length 4.58mm
Width 3.86mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.04000 $0.04
500 $0.0396 $19.8
1000 $0.0392 $39.2
1500 $0.0388 $58.2
2000 $0.0384 $76.8
2500 $0.038 $95
BC32716BU Product Details

BC32716BU Overview


This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -700mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.The emitter base voltage can be kept at -5V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As a result, the part has a transition frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.

BC32716BU Features


the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 100MHz

BC32716BU Applications


There are a lot of ON Semiconductor BC32716BU applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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