FJP5554TU Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 800mA 3V.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 15V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.During maximum operation, collector current can be as low as 4A volts.

FJP5554TU Features

the DC current gain for this device is 20 @ 800mA 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 15V
the current rating of this device is 4A

FJP5554TU Applications

There are a lot of ON Semiconductor FJP5554TU applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver