2SD2195T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SD2195T100 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
TIN COPPER
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
2W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
2A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SD2195
Pin Count
3
Number of Elements
2
Polarity
NPN
Element Configuration
Single
Power Dissipation
500mW
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 1A 2V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1mA, 1A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
80MHz
Max Breakdown Voltage
100V
Frequency - Transition
80MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
6V
hFE Min
1000
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.512582
$0.512582
10
$0.483567
$4.83567
100
$0.456196
$45.6196
500
$0.430373
$215.1865
1000
$0.406012
$406.012
2SD2195T100 Product Details
2SD2195T100 Overview
DC current gain in this device equals 1000 @ 1A 2V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 6V for high efficiency.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 80MHz in the part.Single BJT transistor can take a breakdown input voltage of 100V volts.Maximum collector currents can be below 2A volts.
2SD2195T100 Features
the DC current gain for this device is 1000 @ 1A 2V the vce saturation(Max) is 1.5V @ 1mA, 1A the emitter base voltage is kept at 6V the current rating of this device is 2A a transition frequency of 80MHz
2SD2195T100 Applications
There are a lot of ROHM Semiconductor 2SD2195T100 applications of single BJT transistors.