2SD2351T106W Overview

DC current gain in this device equals 820 @ 1mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltage should be kept at 150mA for high efficiency.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 150mA.As you can see, the part has a transition frequency of 250MHz.Breakdown input voltage is 50V volts.Single BJT transistor is possible for the collector current to fall as low as 150mA volts at Single BJT transistors maximum.

2SD2351T106W Features

the DC current gain for this device is 820 @ 1mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 12V
the current rating of this device is 150mA
a transition frequency of 250MHz

2SD2351T106W Applications

There are a lot of ROHM Semiconductor 2SD2351T106W applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface