2SD2656T106 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SD2656T106 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
30V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SD2656
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
400MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage
30V
Max Frequency
100MHz
Transition Frequency
400MHz
Collector Emitter Saturation Voltage
140mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
6V
hFE Min
270
Continuous Collector Current
1A
Height
900μm
Length
2.1mm
Width
1.35mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.067680
$0.06768
500
$0.049765
$24.8825
1000
$0.041471
$41.471
2000
$0.038046
$76.092
5000
$0.035557
$177.785
10000
$0.033077
$330.77
15000
$0.031989
$479.835
50000
$0.031454
$1572.7
2SD2656T106 Product Details
2SD2656T106 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 100mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 140mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 25mA, 500mA.Continuous collector voltage should be kept at 1A for high efficiency.Keeping the emitter base voltage at 6V can result in a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).In the part, the transition frequency is 400MHz.Input voltage breakdown is available at 30V volts.A maximum collector current of 1A volts can be achieved.
2SD2656T106 Features
the DC current gain for this device is 270 @ 100mA 2V a collector emitter saturation voltage of 140mV the vce saturation(Max) is 350mV @ 25mA, 500mA the emitter base voltage is kept at 6V the current rating of this device is 1A a transition frequency of 400MHz
2SD2656T106 Applications
There are a lot of ROHM Semiconductor 2SD2656T106 applications of single BJT transistors.