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2SD2656T106

2SD2656T106

2SD2656T106

ROHM Semiconductor

2SD2656T106 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD2656T106 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD2656
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 400MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage 30V
Max Frequency 100MHz
Transition Frequency 400MHz
Collector Emitter Saturation Voltage 140mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
hFE Min 270
Continuous Collector Current 1A
Height 900μm
Length 2.1mm
Width 1.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.067680 $0.06768
500 $0.049765 $24.8825
1000 $0.041471 $41.471
2000 $0.038046 $76.092
5000 $0.035557 $177.785
10000 $0.033077 $330.77
15000 $0.031989 $479.835
50000 $0.031454 $1572.7
2SD2656T106 Product Details

2SD2656T106 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 100mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 140mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 25mA, 500mA.Continuous collector voltage should be kept at 1A for high efficiency.Keeping the emitter base voltage at 6V can result in a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).In the part, the transition frequency is 400MHz.Input voltage breakdown is available at 30V volts.A maximum collector current of 1A volts can be achieved.

2SD2656T106 Features


the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 140mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 400MHz

2SD2656T106 Applications


There are a lot of ROHM Semiconductor 2SD2656T106 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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