2SD2662T100 Overview
This device has a DC current gain of 270 @ 100mA 2V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 50mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Single BJT transistor contains a transSingle BJT transistorion frequency of 330MHz.An input voltage of 30V volts is the breakdown voltage.When collector current reaches its maximum, it can reach 1.5A volts.
2SD2662T100 Features
the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 330MHz
2SD2662T100 Applications
There are a lot of ROHM Semiconductor 2SD2662T100 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
