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ZXT10N50DE6TA

ZXT10N50DE6TA

ZXT10N50DE6TA

Diodes Incorporated

ZXT10N50DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXT10N50DE6TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Weight 14.996898mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 50V
Max Power Dissipation 1.1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 3A
Frequency 165MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXT10N50D
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 1.7W
Transistor Application SWITCHING
Gain Bandwidth Product 165MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 100mA, 3A
Collector Emitter Breakdown Voltage 50V
Transition Frequency 165MHz
Collector Emitter Saturation Voltage 225mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 3A
Height 1.3mm
Length 3.1mm
Width 1.8mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.955997 $1.955997
10 $1.845280 $18.4528
100 $1.740830 $174.083
500 $1.642293 $821.1465
1000 $1.549333 $1549.333
ZXT10N50DE6TA Product Details

ZXT10N50DE6TA Overview


This device has a DC current gain of 100 @ 2A 2V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 225mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 100mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at 3A.The emitter base voltage can be kept at 5V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As you can see, the part has a transition frequency of 165MHz.Single BJT transistor can be broken down at a voltage of 50V volts.A maximum collector current of 3A volts can be achieved.

ZXT10N50DE6TA Features


the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 225mV
the vce saturation(Max) is 300mV @ 100mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 165MHz

ZXT10N50DE6TA Applications


There are a lot of Diodes Incorporated ZXT10N50DE6TA applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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