KSC3953DSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC3953DSTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSC3953
Power - Max
1.3W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 3mA, 30mA
Voltage - Collector Emitter Breakdown (Max)
120V
Current - Collector (Ic) (Max)
200mA
Frequency - Transition
400MHz
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.822800
$4.8228
10
$4.549811
$45.49811
100
$4.292275
$429.2275
500
$4.049316
$2024.658
1000
$3.820109
$3820.109
KSC3953DSTU Product Details
KSC3953DSTU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 10mA 10V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 3mA, 30mA.There is no device package available from the supplier for this product.Collector Emitter Breakdown occurs at 120VV - Maximum voltage.
KSC3953DSTU Features
the DC current gain for this device is 60 @ 10mA 10V the vce saturation(Max) is 1V @ 3mA, 30mA the supplier device package of TO-126-3
KSC3953DSTU Applications
There are a lot of ON Semiconductor KSC3953DSTU applications of single BJT transistors.