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KSC3953DSTU

KSC3953DSTU

KSC3953DSTU

ON Semiconductor

KSC3953DSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC3953DSTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC3953
Power - Max 1.3W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 3mA, 30mA
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 200mA
Frequency - Transition 400MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.822800 $4.8228
10 $4.549811 $45.49811
100 $4.292275 $429.2275
500 $4.049316 $2024.658
1000 $3.820109 $3820.109
KSC3953DSTU Product Details

KSC3953DSTU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 10mA 10V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 3mA, 30mA.There is no device package available from the supplier for this product.Collector Emitter Breakdown occurs at 120VV - Maximum voltage.

KSC3953DSTU Features


the DC current gain for this device is 60 @ 10mA 10V
the vce saturation(Max) is 1V @ 3mA, 30mA
the supplier device package of TO-126-3

KSC3953DSTU Applications


There are a lot of ON Semiconductor KSC3953DSTU applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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