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KSC3953DSTU

KSC3953DSTU

KSC3953DSTU

ON Semiconductor

KSC3953DSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC3953DSTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126-3
Operating Temperature150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC3953
Power - Max 1.3W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 3mA, 30mA
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 200mA
Frequency - Transition 400MHz
In-Stock:83883 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.822800$4.8228
10$4.549811$45.49811
100$4.292275$429.2275
500$4.049316$2024.658
1000$3.820109$3820.109

KSC3953DSTU Product Details

KSC3953DSTU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 10mA 10V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 3mA, 30mA.There is no device package available from the supplier for this product.Collector Emitter Breakdown occurs at 120VV - Maximum voltage.

KSC3953DSTU Features


the DC current gain for this device is 60 @ 10mA 10V
the vce saturation(Max) is 1V @ 3mA, 30mA
the supplier device package of TO-126-3

KSC3953DSTU Applications


There are a lot of ON Semiconductor KSC3953DSTU applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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