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NJVMJD44H11T4G-VF01

NJVMJD44H11T4G-VF01

NJVMJD44H11T4G-VF01

ON Semiconductor

NJVMJD44H11T4G-VF01 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJVMJD44H11T4G-VF01 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number MJD44H11
Polarity NPN
Power - Max 1.75W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 8A
Frequency - Transition 85MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.554422 $0.554422
10 $0.523040 $5.2304
100 $0.493434 $49.3434
500 $0.465504 $232.752
1000 $0.439154 $439.154
NJVMJD44H11T4G-VF01 Product Details

NJVMJD44H11T4G-VF01 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 4A 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of DPAK.The device exhibits a collector-emitter breakdown at 80V.

NJVMJD44H11T4G-VF01 Features


the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the supplier device package of DPAK

NJVMJD44H11T4G-VF01 Applications


There are a lot of ON Semiconductor NJVMJD44H11T4G-VF01 applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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