NJVMJD44H11T4G-VF01 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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NJVMJD44H11T4G-VF01 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
DPAK
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
MJD44H11
Polarity
NPN
Power - Max
1.75W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 4A 1V
Current - Collector Cutoff (Max)
1μA
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 8A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
8A
Frequency - Transition
85MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.554422
$0.554422
10
$0.523040
$5.2304
100
$0.493434
$49.3434
500
$0.465504
$232.752
1000
$0.439154
$439.154
NJVMJD44H11T4G-VF01 Product Details
NJVMJD44H11T4G-VF01 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 4A 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of DPAK.The device exhibits a collector-emitter breakdown at 80V.
NJVMJD44H11T4G-VF01 Features
the DC current gain for this device is 40 @ 4A 1V the vce saturation(Max) is 1V @ 400mA, 8A the supplier device package of DPAK
NJVMJD44H11T4G-VF01 Applications
There are a lot of ON Semiconductor NJVMJD44H11T4G-VF01 applications of single BJT transistors.