EM6M1T2R

new-10%

Manufacturer part number:EM6M1T2R

Manufacturer:ROHM Semiconductor

Description:MOSFET N/P-CH 30V/20V EMT6

Case Package:SOT-23

Datasheet:EM6M1T2R Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	TIN COPPER
Subcategory	Other Transistors
Max Power Dissipation	150mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
Base Part Number	6M1
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150mW
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8 Ω @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds	13pF @ 5V
Current - Continuous Drain (Id) @ 25°C	100mA 200mA
Gate Charge (Qg) (Max) @ Vgs	0.9nC @ 4.5V
Drain to Source Voltage (Vdss)	30V 20V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID)	200mA
Drain Current-Max (Abs) (ID)	0.1A
Drain-source On Resistance-Max	8Ohm
Drain to Source Breakdown Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant