HP8K24TB

new-10%

Manufacturer part number:HP8K24TB

Manufacturer:ROHM Semiconductor

Description:HP8K24 IS THE HIGH RELIABILITY T

Case Package:SOT-23

Datasheet:HP8K24TB Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2016
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN SOURCE
Power - Max	3W Ta
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.8m Ω @ 15A, 10V, 3m Ω @ 26A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	590pF 2410pF @ 15V
Current - Continuous Drain (Id) @ 25°C	15A Ta 27A Tc 26A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs	10nC, 36nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drain Current-Max (Abs) (ID)	15A
Drain-source On Resistance-Max	0.0133Ohm
Pulsed Drain Current-Max (IDM)	60A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	16.5 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant