DMN2029USD-13

new-10%

Manufacturer part number:DMN2029USD-13

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CH 20V 5.8A 8SO

Case Package:SOT-23

Datasheet:DMN2029USD-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2013
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Max Power Dissipation	1.2W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Reference Standard	AEC-Q101
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	16.5 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 6.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1171pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	18.6nC @ 8V
Rise Time	33.3ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	53.5 ns
Turn-Off Delay Time	119.3 ns
Continuous Drain Current (ID)	5.8A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.025Ohm
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.5mm
Length	4.95mm
Width	3.95mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant